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features ? 64-megabit (4m x 16) flash memory 2.7v - 3.6v read/write high performance ? asynchronous access time ? 70 ns ? page mode read time ? 20 ns sector erase architecture ? eight 4k word sectors with individual write lockout ? one hundred twenty-seven 32k word main sectors with individual write lockout typical sector erase time: 32k word sectors ? 700 ms; 4k word sectors ? 200 ms four plane organization, permitting concurrent read in any of three planes not being programmed/erased ? memory plane a: 16m of memory including eight 4k word sectors ? memory plane b: 16m of memory consisting of 32k word sectors ? memory plane c: 16m of memory consisting of 32k word sectors ? memory plane d: 16m of memory consisting of 32k word sectors suspend/resume feature for erase and program ? supports reading and programming data from any sector by suspending erase of a different sector ? supports reading any word by suspending programming of any other word low-power operation ?30 ma active ? 35 a standby 2.2v i/o option reduces overall system power data polling and toggle bit for end of program detection vpp pin for write protection and accelerated program operations reset input for device initialization tsop package top or bottom boot block configuration available 128-bit protection register common flash interface (cfi) green (pb/halide-free) packaging option 1. description the at49bv6416(t) is a 2.7-volt 64-megabit flash memory. the memory is divided into multiple sectors and planes for erase operations. the device can be read or reprogrammed off a single 2.7v power supply, making it ideally suited for in-system programming. the output voltage can be separately controlled down to 2.2v through the vccq supply pin. the device can operate in the asynchronous or page read mode. the at49bv6416(t) is divided into four memory planes. a read operation can occur in any of the three planes which is not being programmed or erased. this concurrent operation allows improved system performance by not requiring the system to wait for a program or erase operation to complete before a read is performed. to further increase the flexibility of the device, it contains an erase suspend and program sus- pend feature. this feature will put the erase or program on hold for any amount of time and let the user read data from or program data to any of the remaining sectors. there is no reason to suspend the erase or program operation if the data to be read is in another memory plane. the end of program or erase is detected by data polling or toggle bit. 64-megabit (4m x 16) page mode 2.7-volt flash memory at49bv6416 at49bv6416t 3451c?flash?2/05
2 3451c?flash?2/05 at49bv6416(t) the vpp pin provides data protection and faster programming times. when the v pp input is below 0.7v, the program and erase functions are inhibited. when v pp is at 1.65v or above, nor- mal program and erase operations can be performed. with v pp at 10.0v, the program (dual- word program command) operation is accelerated. a six-byte command (enter single pulse program mode) to remove the requirement of entering the three-byte program sequence is offered to further improve programming time. after entering the six-byte code, only single pulses on the write control lines are required for writing into the device. this mode (single pulse word program) is exited by powering down the device, by tak- ing the reset pin to gnd or by a high-to-low transition on the v pp input. erase, erase suspend/resume, program suspend/resume and read reset commands will not work while in this mode; if entered they will result in data being programmed into the device. it is not recom- mended that the six-byte code reside in the software of the final product but only exist in external programming code. 2. pin configurations 2.1 tsop top view (type 1) pin name pin function i/o0 - i/o15 data inputs/outputs a0 - a21 addresses ce chip enable oe output enable we write enable reset reset wp write protect vpp write protection and power supply for accelerated program operations vccq output power supply 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 a15 a14 a13 a12 a11 a10 a9 a8 a21 a20 we reset vpp wp a19 a18 a17 a7 a6 a5 a4 a3 a2 a1 a16 vccq gnd i/o15 i/o7 i/o14 i/o6 i/o13 i/o5 i/o12 i/o4 vcc i/o11 i/o3 i/o10 i/o2 i/o9 i/o1 i/o8 i/o0 oe gnd ce a0
3 3451c?flash?2/05 at49bv6416(t) 3. device operation 3.1 command sequences the device powers on in the read mode. command sequences are used to place the device in other operating modes such as program and erase. after the completion of a program or an erase cycle, the device enters the read mode. the command sequences are written by applying a low pulse on the we input with ce low and oe high or by applying a low-going pulse on the ce input with we low and oe high. the address is latched on the falling edge of the we or ce pulse whichever occurs first. valid data is latched on the rising edge of the we or the ce pulse, whichever occurs first. the addresses used in the command sequences are not affected by entering the command sequences. 3.2 asynchronous read the at49bv6416(t) is accessed like an eprom. when ce and oe are low and we is high, the data stored at the memory location determined by the address pins are asserted on the outputs. the outputs are put in the high impedance state whenever ce or oe is high. this dual-line con- trol gives designers flexibility in preventing bus contention. 3.3 page read the page read operation of the device is controlled by ce and oe inputs. the page size is four words. the first word access of the page read is the same as the asynchronous read. the first word is read at an asynchronous speed of 70 ns. once the first word is read, toggling a0 and a1 will result in subsequent reads within the page being output at a speed of 20 ns. the ?page read cycle waveform? is shown on page 21 . 3.4 reset a reset input pin is provided to ease some system applications. when reset is at a logic high level, the device is in its standard operating mode. a low level on the reset pin halts the present device operation and puts the outputs of the device in a high-impedance state. when a high level is reasserted on the reset pin, the device returns to read or standby mode, depend- ing upon the state of the control pins. 3.5 erase before a word can be reprogrammed it must be erased. the erased state of the memory bits is a logical ?1?. the entire memory can be erased by using the chip erase command or individual planes or sectors can be erased by using the plane erase or sector erase commands. 3.5.1 chip erase chip erase is a six-bus cycle operation. the automatic erase begins on the rising edge of the last we pulse. chip erase does not alter the data of the protected sectors. after the full chip erase the device will return back to the read m ode. the hardware reset during chip erase will stop the erase but the data will be of unknown state. any command during chip erase except erase suspend will be ignored.
4 3451c?flash?2/05 at49bv6416(t) 3.5.2 plane erase as a alternative to a full chip erase, the device is organized into four planes that can be individu- ally erased. the plane erase command is a six-bus cycle operation. the plane whose address is valid at the sixth falling edge of we will be erased. the plane erase command does not alter the data in protected sectors. 3.5.3 sector erase as an alternative to a full chip erase or a plane erase, the device is organized into multiple sec- tors that can be individually erased. the sector erase command is a six-bus cycle operation. the sector whose address is valid at the sixth falling edge of we will be erased provided the given sector has not been protected. 3.6 word programming the device is programmed on a word-by-word basis. programming is accomplished via the internal device command register and is a four-bus cycle operation. the programming address and data are latched in the fourth cycle. th e device will automatica lly generate the required internal programming pulses. please note that a ?0? cannot be programmed back to a ?1?; only erase operations can convert ?0?s to ?1?s. 3.7 flexible sector protection the at49bv6416(t) offers two sector protection modes, the softlock and the hardlock. the softlock mode is optimized as sector protection for sectors whose content changes frequently. the hardlock protection mode is recommended for sectors whose content changes infrequently. once either of these two modes is enabled, the contents of the selected sector is read-only and cannot be erased or programmed. each sector can be independently programmed for either the softlock or hardlock sector protection mode. at power-up and reset, all sectors have their soft- lock protection mode enabled. 3.7.1 softlock and unlock the softlock protection mode can be disabled by issuing a two-bus cycle unlock command to the selected sector. once a sector is unlocked, its contents can be erased or programmed. to enable the softlock protection mode, a six-bus cycle softlock command must be issued to the selected sector. 3.7.2 hardlock and write protect (wp ) the hardlock sector protection mode operates in conjunction with the write protection (wp ) pin. the hardlock sector protection mode can be enab led by issuing a six-bus cycle hardlock soft- ware command to the selected sector. the state of the write protect pin affects whether the hardlock protection mode can be overridden. when the wp pin is low and the hardlock protection mode is enabled, the sector cannot be unlocked and the contents of the sector is read-only. when the wp pin is high, the hardlock protection mode is overridden and the sector can be unlocked via the unlock command. to disable the hardlock sector protection mode, the chip must be either reset or power cycled.
5 3451c?flash?2/05 at49bv6416(t) figure 3-1. sector locking state diagram note: 1. the notation [x, y, z] denotes the locking state of a sector. the current locking state of a sector is defined by the st ate of wp and the two bits of the sector-lock status d[1:0]. 3.7.3 sector protection detection a software method is available to determine if the sector protection softlock or hardlock features are enabled. when the device is in the software product identification mode a read from the i/o0 and i/o1 at address location 00002h within a sector will show if the sector is unlocked, soft- locked, or hardlocked. table 3-1. hardlock and softlock protection configurations in conjunction with wp v pp wp hard- lock soft- lock erase/ prog allowed? comments v cc 0 0 0 yes no sector is locked v cc 0 0 1 no sector is softlocked. the unlock command can unlock the sector. v cc 011 no hardlock protection mode is enabled. the sector cannot be unlocked. v cc 1 0 0 yes no sector is locked. v cc 1 0 1 no sector is softlocked. the unlock command can unlock the sector. v cc 1 1 0 yes hardlock protection mode is overridden and the sector is not locked. v cc 111 no hardlock protection mode is overridden and the sector can be unlocked via the unlock command. v il x x x no erase and program operations cannot be performed. [000] [001] [011] [111] [101] [110] [100] unlocked locked wp = v il =0 wp = v ih =1 power-up/reset default power-up/reset default hardlocked is disabled by wp = v ih = unlock command = softlock command = hardlock command hardlocked ab c c ab ab c c a b c
6 3451c?flash?2/05 at49bv6416(t) 3.8 program/erase status the device provides several bits to determine the status of a program or erase operation: i/o2, i/o3, i/o5, i/o6, and i/o7. all other status bits are don?t care. the ?status bit table? on page 11 and the following four sections describe the func tion of these bits. to provide greater flexibility for system designers, the at49bv6416(t) contains a programmable configuration register. the configuration register allows the user to specify the status bit operation. the configuration regis- ter can be set to one of two different values, ?00? or ?01?. if the configuration register is set to ?00?, the part will automatically return to t he read mode after a successful program or erase operation. if the configuration register is set to a ?01?, a product id exit command must be given after a successful program or erase operation before the part will return to the read mode. it is important to note that whether the configuration register is set to a ?00? or to a ?01?, any unsuc- cessful program or erase operation requires using the product id exit command to return the device to read mode. the default value (after power-up) for the configuration register is ?00?. using the four-bus cycle set configuration register command as shown in the ?command defini- tion table? on page 12 , the value of the configuration register can be changed. voltages applied to the reset pin will not alter the value of the configuration register. the value of the configuration register will affect the operation of the i/o7 status bit as described below. 3.8.1 data polling the at49bv6416(t) features data polling to indicate the end of a program cycle. if the status configuration register is set to a ?00?, during a program cycle an attempted read of the last word loaded will result in the complement of the loaded data on i/o7. once the program cycle has been completed, true data is valid on all outputs and the next cycle may begin. during a chip or sector erase operation, an attempt to read the device will give a ?0? on i/o7. once the program or erase cycle has completed, true data will be read from the device. data polling may begin at any time during the program cycle. please see ?status bit table? on page 11 for more details. if the status bit configuration register is set to a ?01?, the i/o7 status bit will be low while the device is actively programming or erasing data. i/o7 will go high when the device has completed a program or erase operation. once i/o7 has gone high, status information on the other pins can be checked. the data polling status bit must be used in conjunction with the erase/program and v pp status bit as shown in the algorithm in figures 3-2 and 3-3 on page 9 . 3.8.2 toggle bit in addition to data polling, the at49bv6416(t) provides another method for determining the end of a program or erase cycle. during a program or erase operation, successive attempts to read data from the memory will result in i/o6 toggling between one and zero. once the program cycle has completed, i/o6 will stop toggling and valid data will be read. examining the toggle bit may begin at any time during a program cycle. please see ?status bit table? on page 11 for more details. table 3-2. sector protection status i/o1 i/o0 sector protection status 0 0 sector not locked 0 1 softlock enabled 1 0 hardlock enabled 1 1 both hardlock and softlock enabled
7 3451c?flash?2/05 at49bv6416(t) the toggle bit status bit should be used in conjunction with the erase/program and v pp status bit as shown in the algorithm in figures 3-4 and 3-5 on page 10 . 3.8.3 erase/program status bit the device offers a status bit on i/o5 that indicates whether the program or erase operation has exceeded a specified internal pulse count limit. if the status bit is a ?1?, the device is unable to verify that an erase or a word program operation has been successfully performed. the device may also output a ?1? on i/o5 if the system tries to program a ?1? to a location that was previ- ously programmed to a ?0?. only an erase operation can change a ?0? back to a ?1?. if a program (sector erase) command is issued to a protected sector, the protected sector will not be pro- grammed (erased). the device will go to a status read mode and the i/o5 status bit will be set high, indicating the program (erase) operation did not complete as requested. once the erase/program status bit has been set to a ?1?, the system must write the product id exit com- mand to return to the read mode. the erase/program status bit is a ?0? while the erase or program operation is still in progress. please see ?status bit table? on page 11 for more details. 3.8.4 vpp status bit the at49bv6416(t) provides a status bit on i/o3 that provides information regarding the volt- age level of the vpp pin. during a program or erase operation, if the voltage on the vpp pin is not high enough to perform the desired operation su ccessfully, the i/o3 status bit will be a ?1?. once the v pp status bit has been set to a ?1?, the system must write the product id exit com- mand to return to the read mode. on the other hand, if the voltage level is high enough to perform a program or erase operation successfully, the v pp status bit will output a ?0?. please see ?status bit table? on page 11 for more details. 3.9 erase suspend/erase resume the erase suspend command allows the system to interrupt a sector erase operation and then program or read data from a different sector within the same plane. since this device has a mul- tiple plane architecture, there is no need to use the erase suspend feature while erasing a sector when you want to read data from a sector in another plane. after the erase suspend command is given, the device requires a maximum time of 15 s to suspend the erase operation. after the erase operation has been suspended, the plane that contains the suspended sector enters the erase-suspend-read mode. the system can then read data or program data to any other sector within the device. an address is not required during the erase suspend command. during a sec- tor erase suspend, another sector cannot be erased. to resume the sector erase operation, the system must write the erase resume command. the erase resume command is a one-bus cycle command, which does require the plane address. the device also supports an erase sus- pend during a complete chip erase. while the chip erase is suspended, the user can read from any sector within the memory that is protected. the command sequence for a chip erase sus- pend and a sector erase suspend are the same. 3.10 program suspend/program resume the program suspend command allows the system to interrupt a programming operation and then read data from a different word within the memory. after the program suspend command is given, the device requires a maximum of 10 s to suspend the programming operation. after the programming operation has been suspended, the system can then read from any other word within the device. an address is not required during the program suspend operation. to resume the programming operation, the system must write the program resume command. the program suspend and resume are one-bus cycle commands. the command sequence for the
8 3451c?flash?2/05 at49bv6416(t) erase suspend and program suspend are the same, and the command sequence for the erase resume and program resume are the same. 3.11 128-bit protection register the at49bv6416(t) contains a 128-bit register that can be used for security purposes in sys- tem design. the protection register is divided into two 64-bit blocks. the two blocks are designated as block a and block b. the data in block a is non-changeable and is programmed at the factory with a unique number. the data in block b is programmed by the user and can be locked out such that data in the block cannot be reprogrammed. to program block b in the pro- tection register, the four-bus cycle program protection register command must be used as shown in the ?command definition table? on page 12 . to lock out block b, the four-bus cycle lock protection register command must be used as shown in the command definition table. data bit d1 must be zero during the fourth bus cycle. all other data bits during the fourth bus cycle are don?t cares. to determine whether block b is locked out, the status of block b protection com- mand is given. if data bit d1 is zero, block b is locked. if data bit d1 is one, block b can be reprogrammed. please see the ?protection register addressing table? on page 13 for the address locations in the protection register. to read the protection register, the product id entry command is given followed by a normal read operation from an address within the protection register. after determining whether block b is protected or not or reading the protection register, the product id exit command must be given prior to performing any other operation. 3.12 common flash interface (cfi) common flash interface (cfi) is a published, standardized data structure that may be read from a flash device. cfi allows system software to query the installed device to determine the config- urations, various electrical and timing parameters, and functions supported by the device. cfi is used to allow the system to learn how to interface to the flash device most optimally. the two primary benefits of using cfi are ease of upgr ading and second source availability. the com- mand to enter the cfi query mode is a one-bus cycle command which requires writing data 98h to address 55h. the cfi query command can be written when the device is ready to read data or can also be written when the part is in the product id mode. once in the cfi query mode, the system can read cfi data at the addresses given in the ?common flash interface definition table? on page 25 . to exit the cfi query mode, the product id exit command must be given. 3.13 hardware data protection hardware features protect against inadvertent programs to the at49bv6416(t) in the following ways: (a) v cc sense: if v cc is below 1.8v (typical), the program function is inhibited. (b) v cc power-on delay: once v cc has reached the v cc sense level, the device will automatically time- out 10 ms (typical) before programming. (c) program inhibit: holding any one of oe low, ce high or we high inhibits program cycles. (d) noise filter: pulses of less than 15 ns (typical) on the we or ce inputs will not initiate a program cycle. (e) v pp is less than v ilpp . 3.14 input levels while operating with a 2.7v to 3.6v power supply, the address inputs and control inputs (oe , ce and we ) may be driven from 0 to 5.5v without adversely affecting the operation of the device. the i/o lines can be driven from 0 to v ccq + 0.6v. 3.15 output levels for the at49bv6416(t), output high levels are equal to v ccq - 0.1v (not v cc ). for 2.7v to 3.6v output levels, v ccq must be tied to v cc .
9 3451c?flash?2/05 at49bv6416(t) figure 3-2. data polling algorithm (configuration register = 00) notes: 1. va = valid address for programming. during a sector erase operation, a valid address is any sector address within the sector being erased. during chip erase, a valid address is any non-protected sector address. 2. i/o7 should be rechecked even if i/o5 = ?1? because i/o7 may change simultaneously with i/o5. start read i/o7 - i/o0 addr = va i/o7 = data? i/o3, i/o5 = 1? read i/o7 - i/o0 addr = va i/o7 = data? program/erase operation not successful, write product id exit command no no no yes yes yes program/erase operation successful, device in read mode figure 3-3. data polling algorithm (configuration register = 01) note: 1. va = valid address for programming. during a sector erase operation, a valid address is any sector address within the sector being erased. during chip erase, a valid address is any non-protected sector address. start read i/o7 - i/o0 addr = va i/o7 = 1? i/o3, i/o5 = 1? program/erase operation not successful, write product id exit command no no yes yes program/erase operation successful, write product id exit command
10 3451c?flash?2/05 at49bv6416(t) figure 3-4. toggle bit algorithm (configuration register = 00) note: 1. the system should recheck the toggle bit even if i/o5 = ?1? because the toggle bit may stop toggling as i/o5 changes to ?1?. start read i/o7 - i/o0 read i/o7 - i/o0 toggle bit = toggle? i/o3, i/o5 = 1? read i/o7 - i/o0 twice toggle bit = toggle? program/erase operation not successful, write product id exit command program/erase operation successful, device in read mode no no no yes yes yes figure 3-5. toggle bit algorithm (configuration register = 01) note: 1. the system should recheck the toggle bit even if i/o5 = ?1? because the toggle bit may stop toggling as i/o5 changes to ?1?. start read i/o7 - i/o0 read i/o7 - i/o0 toggle bit = toggle? i/o3, i/o5 = 1? read i/o7 - i/o0 twice toggle bit = toggle? program/erase operation not successful, write product id exit command program/erase operation successful, write product id exit command no no no yes yes yes
11 3451c?flash?2/05 at49bv6416(t) 4. status bit table i/o7 i/o6 i/o2 configuration register: 00/01 00/01 00/01 00/01 00/01 00/01 00/01 00/01 00/01 00/01 00/01 00/01 read address in plane a plane b plane c plane d plane a plane b plane c plane d plane a plane b plane c plane d while programming in plane a i/o7 / 0 data data data to g g l e data data data 1 data data data programming in plane b data i/o7 / 0 data data data to g g l e data data data 1 data data programming in plane c data data i/o7 / 0 data data data to g g l e data data data 1 data programming in plane d data data data i/o7 /0 data data data toggle data data data 1 erasing in plane a 0 / 0 data data data to g g l e data data data to g g l e data data data erasing in plane b data 0 / 0 data data data to g g l e data data data to g g l e data data erasing in plane c data data 0 / 0 data data data to g g l e data data data to g g l e data erasing in plane d data data data 0 / 0 data data data to g g l e data data data to g g l e erase suspended & read erasing sector 1111 1 1 1 1toggletoggletoggletoggle erase suspended & read non- erasing sector data data data data data data data data data data data data erase suspended & program non- erasing sector in plane a i/o7 / 0 data data data to g g l e data data data to g g l e data data data erase suspended & program non- erasing sector in plane b data i/o7 / 0 data data data to g g l e data data data to g g l e data data erase suspended & program non- erasing sector in plane c data data i/o7 / 0 data data data to g g l e data data data to g g l e data erase suspended & program non- erasing sector in plane d data data data i/o7 /0 data data data toggle data data data toggle erase suspended & program suspended & read from non- suspended sectors data data data data data data data data data data data data
12 3451c?flash?2/05 at49bv6416(t) notes: 1. the data format in each bus cycle is as follows: i/ o15 - i/o8 (don?t care); i/o7 - i/o 0 (hex). the address format in each bus cycle is as follows: a11 - a0 (hex), a11 - a21 (don?t care). 2. since a11 is a don?t care, aaa can be replaced with 2aa. 3. either one of the product id exit commands can be used. 4. sa = sector address. any word address within a sector can be used to designate the sector address (see pages 14 - 17 for details). 5. once a sector is in the hardlock protection mode, it cannot be disabled unless the chip is reset or power cycled. 6. pa is the plane address (a21 - a20). 7. during the fourth bus cycle, the manufacturer code is read from address pa+00000h, the device code is read from address pa+00001h, and the data in the protection register is read from addresses 000081h - 000088h. pa (a21 - a20) must spec- ify the same plane address as specified in the third bus cycle. 8. the fast programming option enables the user to program two words in parallel only when v pp = 10v. the addresses, addr0 and addr1, of the two words, d in0 and d in1 , must only differ in address a0. this command should be used for manufacturing purpose only. 9. if data bit d1 is ?0?, block b is locked. if data bit d1 is ?1?, block b can be reprogrammed. 10. the default state (after power-up) of the configuration register is ?00?. 11. any address within the user programmable register region. please see ?protection register addressing table? on page 13 . 12. for the at49bv6416, xxxx = 0000h. for the at49bv6416t, xxxx = 3f80h. 13. for the at49bv6416, xxxx = 0000h. for the at49bv6416t, xxxx = 0f80h. 5. command definition table command sequence bus cycles 1st bus cycle 2nd bus cycle 3rd bus cycle 4th bus cycle 5th bus cycle 6th bus cycle addr data addr data addr data addr data addr data addr data read 1 addr d out chip erase 6 555 aa aaa (2) 55 555 80 555 aa aaa 55 555 10 plane erase 6 555 aa aaa 55 555 80 555 aa aaa 55 pa (6) 20 sector erase 6 555 aa aaa 55 555 80 555 aa aaa 55 sa (4) 30 word program 4 555 aa aaa 55 555 a0 addr d in dual-word program (8) 5 555 aa aaa 55 555 a1 addr0 d in0 addr1 d in1 enter single-pulse program mode 6 555 aa aaa 55 555 80 555 aa aaa 55 555 a0 single-pulse word program mode 1 addr d in sector softlock 6 555 aa aaa 55 555 80 555 aa aaa 55 sa (4) 40 sector unlock 2 555 aa sa (4) 70 sector hardlock 6 555 aa aaa 55 555 80 555 aa aaa 55 sa (4)(5) 60 erase/program suspend 1 xxx b0 erase/program resume 1 pa (6) 30 product id entry (7) 3 555 aa aaa 55 pa+00555 90 product id exit (3) 3 555 aa aaa 55 555 f0 product id exit (3) 1 xxx fx program protection register ? block b 4 555 aa aaa 55 555 c0 xxxx (12) 8x (11) d in lock protection register ? block b 4 555 aa aaa 55 555 c0 xxxx80 (12) x0 status of block b protection 4 555 aa aaa 55 555 90 xxxx80 (13) d out (9) set configuration register 4 555 aa aaa 55 555 e0 xxx 00/01 (10) cfi query 1 x55 98
13 3451c?flash?2/05 at49bv6416(t) 6. absolute maximum ratings* temperature under bias ................................ -55c to +125c *notice: stresses beyond those listed under ?absolute maximum ratings? may cause permanent dam- age to the device. this is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. storage temperature ..................................... -65c to +150c all input voltages except v pp (including nc pins) with respect to ground ...................................-0.6v to +6.25v v pp input voltage with respect to ground ......................................... 0v to 10.0v all output voltages with respect to ground ...........................-0.6v to v ccq + 0.6v 7. protection register addressing table word use block a7 a6 a5 a4 a3 a2 a1 a0 0factorya10000001 1factorya10000010 2factorya10000011 3factorya10000100 4userb10000101 5userb10000110 6userb10000111 7userb10001000
14 3451c?flash?2/05 at49bv6416(t) 8. memory organization ? at49bv6416 6416 plane sector size (words) x16 address range (a21 - a0) a sa0 4k 00000 - 00fff a sa1 4k 01000 - 01fff a sa2 4k 02000 - 02fff a sa3 4k 03000 - 03fff a sa4 4k 04000 - 04fff a sa5 4k 05000 - 05fff a sa6 4k 06000 - 06fff a sa7 4k 07000 - 07fff a sa8 32k 08000 - 0ffff a sa9 32k 10000 - 17fff a sa10 32k 18000 - 1ffff a sa11 32k 20000 - 27fff a sa12 32k 28000 - 2ffff a sa13 32k 30000 - 37fff a sa14 32k 38000 - 3ffff a sa15 32k 40000 - 47fff a sa16 32k 48000 - 4ffff a sa17 32k 50000 - 57fff a sa18 32k 58000 - 5ffff a sa19 32k 60000 - 67fff a sa20 32k 68000 - 6ffff a sa21 32k 70000 - 77fff a sa22 32k 78000 - 7ffff a sa23 32k 80000 - 87fff a sa24 32k 88000 - 8ffff a sa25 32k 90000 - 97fff a sa26 32k 98000 - 9ffff a sa27 32k a0000 - a7fff a sa28 32k a8000 - affff a sa29 32k b0000 - b7fff a sa30 32k b8000 - bffff a sa31 32k c0000 - c7fff a sa32 32k c8000 - cffff a sa33 32k d0000 - d7fff a sa34 32k d8000 - dffff a sa35 32k e0000 - e7fff a sa36 32k e8000 - effff a sa37 32k f0000 - f7fff a sa38 32k f8000 - fffff b sa39 32k 100000 - 107fff b sa40 32k 108000 - 10ffff b sa41 32k 110000 - 117fff b sa42 32k 118000 - 11ffff b sa43 32k 120000 - 127fff b sa44 32k 128000 - 12ffff b sa45 32k 130000 - 137fff b sa46 32k 138000 - 13ffff b sa47 32k 140000 - 147fff b sa48 32k 148000 - 14ffff b sa49 32k 150000 - 157fff b sa50 32k 158000 - 15ffff b sa51 32k 160000 - 167fff b sa52 32k 168000 - 16ffff b sa53 32k 170000 - 177fff b sa54 32k 178000 - 17ffff b sa55 32k 180000 - 187fff b sa56 32k 188000 - 18ffff b sa57 32k 190000 - 197fff b sa58 32k 198000 - 19ffff b sa59 32k 1a0000 - 1a7fff b sa60 32k 1a8000 - 1affff b sa61 32k 1b0000 - 1b7fff b sa62 32k 1b8000 - 1bffff b sa63 32k 1c0000 - 1c7fff b sa64 32k 1c8000 - 1cffff b sa65 32k 1d0000 - 1d7fff 8. memory organization ? at49bv6416 (continued) 6416 plane sector size (words) x16 address range (a21 - a0)
15 3451c?flash?2/05 at49bv6416(t) b sa66 32k 1d8000 - 1dffff b sa67 32k 1e0000 - 1e7fff b sa68 32k 1e8000 - 1effff b sa69 32k 1f0000 - 1f7fff b sa70 32k 1f8000 - 1fffff c sa71 32k 200000 - 207fff c sa72 32k 208000 - 20ffff c sa73 32k 210000 - 217fff c sa74 32k 218000 - 21ffff c sa75 32k 220000 - 227fff c sa76 32k 228000 - 22ffff c sa77 32k 230000 - 237fff c sa78 32k 238000 - 23ffff c sa79 32k 240000 - 247fff c sa80 32k 248000 - 24ffff c sa81 32k 250000 - 257fff c sa82 32k 258000 - 25ffff c sa83 32k 260000 - 267fff c sa84 32k 268000 - 26ffff c sa85 32k 270000 - 277fff c sa86 32k 278000 - 27ffff c sa87 32k 280000 - 287fff c sa88 32k 288000 - 28ffff c sa89 32k 290000 - 297fff c sa90 32k 298000 - 29ffff c sa91 32k 2a0000 - 2a7fff c sa92 32k 2a8000 - 2affff c sa93 32k 2b0000 - 2b7fff c sa94 32k 2b8000 - 2bffff c sa95 32k 2c0000 - 2c7fff c sa96 32k 2c8000 - 2cffff c sa97 32k 2d0000 - 2d7fff c sa98 32k 2d8000 - 2dffff c sa99 32k 2e0000 - 2e7fff 8. memory organization ? at49bv6416 (continued) 6416 plane sector size (words) x16 address range (a21 - a0) c sa100 32k 2e8000 - 2effff c sa101 32k 2f0000 - 2f7fff c sa102 32k 2f8000 - 2fffff d sa103 32k 300000 - 307fff d sa104 32k 308000 - 30ffff d sa105 32k 310000 - 317fff d sa106 32k 318000 - 31ffff d sa107 32k 320000 - 327fff d sa108 32k 328000 - 32ffff d sa109 32k 330000 - 337fff d sa110 32k 338000 - 33ffff d sa111 32k 340000 - 347fff d sa112 32k 348000 - 34ffff d sa113 32k 350000 - 357fff d sa114 32k 358000 - 35ffff d sa115 32k 360000 - 367fff d sa116 32k 368000 - 36ffff d sa117 32k 370000 - 377fff d sa118 32k 378000 - 37ffff d sa119 32k 380000 - 387fff d sa120 32k 388000 - 38ffff d sa121 32k 390000 - 397fff d sa122 32k 398000 - 39ffff d sa123 32k 3a0000 - 3a7fff d sa124 32k 3a8000 - 3affff d sa125 32k 3b0000 - 3b7fff d sa126 32k 3b8000 - 3bffff d sa127 32k 3c0000 - 3c7fff d sa128 32k 3c8000 - 3cffff d sa129 32k 3d0000 - 3d7fff d sa130 32k 3d8000 - 3dffff d sa131 32k 3e0000 - 3e7fff d sa132 32k 3e8000 - 3effff d sa133 32k 3f0000 - 3f7fff d sa134 32k 3f8000 - 3fffff 8. memory organization ? at49bv6416 (continued) 6416 plane sector size (words) x16 address range (a21 - a0)
16 3451c?flash?2/05 at49bv6416(t) 9. memory organization ? at49bv6416t 6416t plane sector size (words) x16 address range (a21 - a0) d sa0 32k 00000 - 07fff d sa1 32k 08000 - 0ffff d sa2 32k 10000 - 17fff d sa3 32k 18000 - 1ffff d sa4 32k 20000 - 27fff d sa5 32k 28000 - 2ffff d sa6 32k 30000 - 37fff d sa7 32k 38000 - 3ffff d sa8 32k 40000 - 47fff d sa9 32k 48000 - 4ffff d sa10 32k 50000 - 57fff d sa11 32k 58000 - 5ffff d sa12 32k 60000 - 67fff d sa13 32k 68000 - 6ffff d sa14 32k 70000 - 77fff d sa15 32k 78000 - 7ffff d sa16 32k 80000 - 87fff d sa17 32k 88000 - 8ffff d sa18 32k 90000 - 97fff d sa19 32k 98000 - 9ffff d sa20 32k a0000 - a7fff d sa21 32k a8000 - affff d sa22 32k b0000 - b7fff d sa23 32k b8000 - bffff d sa24 32k c0000 - c7fff d sa25 32k c8000 - cffff d sa26 32k d0000 - d7fff d sa27 32k d8000 - dffff d sa28 32k e0000 - e7fff d sa29 32k e8000 - effff d sa30 32k f0000 - f7fff d sa31 32k f8000 - fffff c sa32 32k 100000 - 107fff c sa33 32k 108000 - 10ffff c sa34 32k 110000 - 117fff c sa35 32k 118000 - 11ffff c sa36 32k 120000 - 127fff c sa37 32k 128000 - 12ffff c sa38 32k 130000 - 137fff c sa39 32k 138000 - 13ffff c sa40 32k 140000 - 147fff c sa41 32k 148000 - 14ffff c sa42 32k 150000 - 157fff c sa43 32k 158000 - 15ffff c sa44 32k 160000 - 167fff c sa45 32k 168000 - 16ffff c sa46 32k 170000 - 177fff c sa47 32k 178000 - 17ffff c sa48 32k 180000 - 187fff c sa49 32k 188000 - 18ffff c sa50 32k 190000 - 197fff c sa51 32k 198000 - 19ffff c sa52 32k 1a0000 - 1a7fff c sa53 32k 1a8000 - 1affff c sa54 32k 1b0000 - 1b7fff c sa55 32k 1b8000 - 1bffff c sa56 32k 1c0000 - 1c7fff c sa57 32k 1c8000 - 1cffff c sa58 32k 1d0000 - 1d7fff c sa59 32k 1d8000 - 1dffff c sa60 32k 1e0000 - 1e7fff c sa61 32k 1e8000 - 1effff c sa62 32k 1f0000 - 1f7fff c sa63 32k 1f8000 - 1fffff b sa64 32k 200000 - 207fff b sa65 32k 208000 - 20ffff b sa66 32k 210000 - 217fff b sa67 32k 218000 - 21ffff b sa68 32k 220000 - 227fff b sa69 32k 228000 - 22ffff b sa70 32k 230000 - 237fff b sa71 32k 238000 - 23ffff 9. memory organization ? at49bv6416t (continued) 6416t plane sector size (words) x16 address range (a21 - a0)
17 3451c?flash?2/05 at49bv6416(t) b sa72 32k 240000 - 247fff b sa73 32k 248000 - 24ffff b sa74 32k 250000 - 257fff b sa75 32k 258000 - 25ffff b sa76 32k 260000 - 267fff b sa77 32k 268000 - 26ffff b sa78 32k 270000 - 277fff b sa79 32k 278000 - 27ffff b sa80 32k 280000 - 287fff b sa81 32k 288000 - 28ffff b sa82 32k 290000 - 297fff b sa83 32k 298000 -29ffff b sa84 32k 2a0000 - 2a7fff b sa85 32k 2a8000 - 2affff b sa86 32k 2b0000 - 2b7fff b sa87 32k 2b8000 - 2bffff b sa88 32k 2c0000 - 2c7fff b sa89 32k 2c8000 - 2cffff b sa90 32k 2d0000 - 2d7fff b sa91 32k 2d8000 - 2dffff b sa92 32k 2e0000 - 2e7fff b sa93 32k 2e8000 - 2effff b sa94 32k 2f0000 - 2f7fff b sa95 32k 2f8000 - 2fffff a sa96 32k 300000 - 307fff a sa97 32k 308000 - 30ffff a sa98 32k 310000 - 317fff a sa99 32k 318000 - 31ffff a sa100 32k 320000 - 327fff a sa101 32k 328000 - 32ffff a sa102 32k 330000 - 337fff a sa103 32k 338000 - 33ffff 9. memory organization ? at49bv6416t (continued) 6416t plane sector size (words) x16 address range (a21 - a0) a sa104 32k 340000 - 347fff a sa105 32k 348000 - 34ffff a sa106 32k 350000 - 357fff a sa107 32k 358000 - 35ffff a sa108 32k 360000 - 367fff a sa109 32k 368000 - 36ffff a sa110 32k 370000 - 377fff a sa111 32k 378000 - 37ffff a sa112 32k 380000 - 387fff a sa113 32k 388000 - 38ffff a sa114 32k 390000 - 397fff a sa115 32k 398000 - 39ffff a sa116 32k 3a0000 - 3a7fff a sa117 32k 3a8000 - 3affff a sa118 32k 3b0000 - 3b7fff a sa119 32k 3b8000 - 3bffff a sa120 32k 3c0000 - 3c7fff a sa121 32k 3c8000 - 3cffff a sa122 32k 3d0000 - 3d7fff a sa123 32k 3d8000 - 3dffff a sa124 32k 3e0000 - 3e7fff a sa125 32k 3e8000 - 3effff a sa126 32k 3f0000 - 3f7fff a sa127 4k 3f8000 - 3f8fff a sa128 4k 3f9000 - 3f9fff a sa129 4k 3fa000 - 3fafff a sa130 4k 3fb000 - 3fbfff a sa131 4k 3fc000 - 3fcfff a sa132 4k 3fd000 - 3fdfff a sa133 4k 3fe000 - 3fefff a sa134 4k 3ff000 - 3fffff 9. memory organization ? at49bv6416t (continued) 6416t plane sector size (words) x16 address range (a21 - a0)
18 3451c?flash?2/05 at49bv6416(t) notes: 1. x can be v il or v ih . 2. refer to ac programming waveforms. 3. manufacturer code: 001fh; device code: 00d6h - at49bv6416; 00d2h - at49bv6416t. 4. the vpp pin can be tied to v cc . for faster program operations, v pp can be set to 9.5v 0.5v. 5. v ihpp (min) = 1.65v. 6. v ilpp (max) = 0.7v. 10. dc and ac operating range at49bv6416(t) - 70 operating temperature (case) industrial -40c - 85c v cc power supply 2.7v - 3.6v 11. operating modes mode ce oe we reset v pp (4) ai i/o read v il v il v ih v ih xai d out burst read v il v il v ih v ih xai d out program/erase (3) v il v ih v il v ih v ihpp (5) ai d in standby/program inhibit v ih x (1) xv ih xx high z program inhibit xxv ih v ih x xv il xv ih x xxxxv ilpp (6) output disable x v ih xv ih xhigh z reset x x x v il xx high z product identification software v ih a0 = v il , a1 - a21 = v il manufacturer code (3) a0 = v ih , a1 - a21 = v il device code (3)
19 3451c?flash?2/05 at49bv6416(t) note: 1. in the erase mode, i cc is 35 ma. 13. input test waveforms and measurement level t r , t f < 5 ns 14. output test load note: 1. this parameter is characterized and is not 100% tested. 12. dc characteristics symbol parameter condition min max units i li input load current v in = 0v to v cc 1a i lo output leakage current v i/o = 0v to v cc 1a i sb1 v cc standby current cmos ce = v ccq - 0.3v to v cc 35 a i cc (1) v cc active current f = 5 mhz; i out = 0 ma 30 ma i ccre v cc read while erase current f = 5 mhz; i out = 0 ma 60 ma i ccrw v cc read while write current f = 5 mhz; i out = 0 ma 60 ma v il input low voltage 0.6 v v ih input high voltage v ccq - 0.6 v v ol output low voltage i ol = 2.1 ma 0.45 v v oh output high voltage i oh = -100 a; v ccq = 2.2v - 3.6v v ccq - 0.1 v ac driving levels 2.0v 0.6v 1.5v ac measurement level v 1.8k output pin 30 pf 1.3k ccq 15. pin capacitance f = 1 mhz, t = 25c (1) typ max units conditions c in 46pfv in = 0v c out 812pfv out = 0v
20 3451c?flash?2/05 at49bv6416(t) 17. asynchronous read cycle waveform (1)(2)(3) notes: 1. ce may be delayed up to t acc - t ce after the address transition without impact on t acc . 2. oe may be delayed up to t ce - t oe after the falling edge of ce without impact on t ce or by t acc - t oe after an address change without impact on t acc . 3. t df is specified from oe or ce , whichever occurs first (cl = 5 pf). 16. ac asynchronous read timing characteristics symbol parameter min max units t rc read cycle time 70 ns t acc access, address to data valid 70 ns t ce access, ce to data valid 70 ns t oe oe to data valid 20 ns t df ce , oe high to data float 25 ns t oh output hold from oe , ce or address, whichever occurs first 0 ns t ro reset to output delay 150 ns output valid i/o0 - i/o15 high z reset oe t oe t ce address valid t df t oh t acc t ro ce a0 - a21 t rc
21 3451c?flash?2/05 at49bv6416(t) 19. page read cycle waveform 18. ac asynchronous read timing characteristics symbol parameter min max units t acc access, address to data valid 70 ns t ce access, ce to data valid 70 ns t oe oe to data valid 20 ns t df ce , oe high to data float 25 ns t ro reset to output delay 150 ns t pa a page address access time 20 ns t ce t acc t df t df data valid ce i/o0-i/o15 a2 -a21 oe t oe reset t ro t acc a0 -a1 t pa a
22 3451c?flash?2/05 at49bv6416(t) 21. ac word load waveforms 21.1 we controlled 21.2 ce controlled 20. ac word load characteristics symbol parameter min max units t as address setup time to we and ce low 0 ns t ah address hold time 20 ns t ds data setup time 20 ns t dh data hold time 0 ns t wp ce or we low pulse width 35 ns t wph ce or we high pulse width 25 ns t ds t ah t dh t wp data valid ce i/o0-i/o15 a0 -a21 we t as t ds t dh t wp data valid ce i/o0-i/o15 a0 -a21 we t as t ah
23 3451c?flash?2/05 at49bv6416(t) 23. program cycle waveforms 24. sector, plane or chip erase cycle waveforms notes: 1. oe must be high only when we and ce are both low. 2. for chip erase, the address should be 555. for plane or sector erase, the address depends on what plane or sector is to be erased. (see note 4 and 6 under ?command definition table? on page 12 .) 3. for chip erase, the data should be xx10h, for plane erase, the data should be xx20h, and for sector erase, the data should be xx30h 4. the waveforms shown above use the we controlled ac word load waveforms. 22. program cycle characteristics symbol parameter min typ max units t bp word programming time 15 s t sec1 sector erase cycle time (4k word sectors) 200 ms t sec2 sector erase cycle time (32k word sectors) 700 ms t es erase suspend time 15 s t ps program suspend time 10 s t eres delay between erase resume and erase suspend 500 s input data xxaa ce we i/o0 -i/o15 xx55 xxa0 a0 -a21 addr 555 aaa 555 oe (1) oe (1) xxaa xxaa ce we i/o0 -i/o15 xx55 xx80 a0 -a21 555 555 aaa 555 xx55 note3 aaa note2
24 3451c?flash?2/05 at49bv6416(t) notes: 1. these parameters are characterized and not 100% tested. 2. see t oe spec on page 20 . 26. data polling waveforms notes: 1. these parameters are characterized and not 100% tested. 2. see t oe spec on page 20 . 28. toggle bit waveforms (1)(2)(3) notes: 1. toggling either oe or ce or both oe and ce will operate toggle bit. the t oehp specification must be met by the toggling input(s). 2. beginning and ending state of i/o6 will vary. 3. any address location may be used but the address should not vary. 25. data polling characteristics symbol parameter min typ max units t dh data hold time 10 ns t oeh oe hold time 10 ns t oe oe to output delay (2) ns t wr write recovery time 0 ns a0-a21 we ce oe i/o7 27. toggle bit characteristics (1) symbol parameter min typ max units t dh data hold time 10 ns t oeh oe hold time 10 ns t oe oe to output delay (2) ns t oehp oe high pulse 50 ns t wr write recovery time 0 ns
25 3451c?flash?2/05 at49bv6416(t) 29. common flash interface definition table address at49bv6416(t) comments 10h 0051h ?q? 11h 0052h ?r? 12h 0059h ?y? 13h 0002h 14h 0000h 15h 0041h 16h 0000h 17h 0000h 18h 0000h 19h 0000h 1ah 0000h 1bh 0027h vcc min write/erase 1ch 0036h vcc max write/erase 1dh 0009h vpp min voltage 1eh 000ah vpp max voltage 1fh 0004h typ word write ? 16 s 20h 0000h 21h 0009h typ block erase ? 500 ms 22h 0010h typ chip erase ? 64,300 ms 23h 0004h max word write/typ time 24h 0000h n/a 25h 0003h max block erase/typ block erase 26h 0003h max chip erase/ typ chip erase 27h 0017h device size 28h 0001h x16 device 29h 0000h x16 device 2ah 0000h multiple byte write not supported 2bh 0000h multiple byte write not supported 2ch 0002h 2 regions, x = 2 2dh 007eh 64k bytes, y = 126 2eh 0000h 64k bytes, y = 126 2fh 0000h 64k bytes, z = 256 30h 0001h 64k bytes, z = 256 31h 0007h 8k bytes, y = 7 32h 0000h 8k bytes, y = 7 33h 0020h 8k bytes, z = 32 34h 0000h 8k bytes, z = 32
26 3451c?flash?2/05 at49bv6416(t) vendor specific extended query 41h 0050h ?p? 42h 0052h ?r? 43h 0049h ?i? 44h 0031h major version number, ascii 45h 0030h minor version number, ascii 46h 00afh bit 0 ? chip erase supported, 0 ? no, 1 ? yes bit 1 ? erase suspend supported, 0 ? no, 1 ? yes bit 2 ? program suspend supported, 0 ? no, 1 ? yes bit 3 ? simultaneous operations supported, 0 ? no, 1 ? yes bit 4 ? burst mode read supported, 0 ? no, 1 ? yes bit 5 ? page mode read supported, 0 ? no, 1 ? yes bit 6 ? queued erase supported, 0 ? no, 1 ? yes bit 7 ? protection bits supported, 0 ? no, 1 ? yes 47h 0000h at49bv6416t or 0001h at49bv6416 bit 0 ? top (?0?) or bottom (?1?) boot block device undefined bits are ?0? 48h 0000h bit 0 ? 4 word linear burst with wrap around, 0 ? no, 1 ? yes bit 1 ? 8 word linear burst with wrap around, 0 ? no, 1 ? yes bit 2 ? continuos burst, 0 ? no, 1 ? yes undefined bits are ?0? 49h 0001h bit 0 ? 4 word page, 0 ? no, 1 ? yes bit 1 ? 8 word page, 0 ? no, 1 ? yes undefined bits are ?0? 4ah 0080h location of protection register lock byte, the section's first byte 4bh 0003h # of bytes in the factory prog section of prot register ? 2*n 4ch 0003h # of bytes in the user prog section of prot register ? 2*n 29. common flash interface definition table (continued) address at49bv6416(t) comments
27 3451c?flash?2/05 at49bv6416(t) 30. ordering information 30.1 standard package t acc (ns) i cc (ma) ordering code package operation range active standby 70 30 0.035 at49bv6416-70ti 48t industrial (-40 to 85 c) 70 30 0.035 AT49BV6416T-70TI 48t industrial (-40 to 85 c) 30.2 green package option (pb/halide-free) t acc (ns) i cc (ma) ordering code package operation range active standby 70 30 0.035 at49bv6416-70tu 48t industrial (-40 to 85 c) package type 48t 48-lead, plastic thin small outline package (tsop)
28 3451c?flash?2/05 at49bv6416(t) 31. packaging information 31.1 48t ? tsop 2325 orchard parkway san jose, ca 95131 title drawing no. r rev. 48t , 48-lead (12 x 20 mm package) plastic thin small outline package, type i (tsop) b 48t 10/18/01 pin 1 0o ~ 8o d1 d pin 1 identifier b e e a a2 c l gage plane seating plane l1 a1 common dimensions (unit of measure = mm) symbol min nom max note notes: 1. this package conforms to jedec reference mo-142, variation dd. 2. dimensions d1 and e do not include mold protrusion. allowable protrusion on e is 0.15 mm per side and on d1 is 0.25 mm per side. 3. lead coplanarity is 0.10 mm maximum. a ? ? 1.20 a1 0.05 ? 0.15 a2 0.95 1.00 1.05 d 19.80 20.00 20.20 d1 18.30 18.40 18.50 note 2 e 11.90 12.00 12.10 note 2 l 0.50 0.60 0.70 l1 0.25 basic b 0.17 0.22 0.27 c 0.10 ? 0.21 e 0.50 basic
29 3451c?flash?2/05 at49bv6416(t) 32. revision history revision no. history revision a ? march 2004 ? initial release revision b ? november 2004 ? removed ?preliminary? from the datasheet. ? modified plane erase text on page 3. ? modified note 7 and added notes 11, 12, and 13 on page 11. ? removed note 1 on page 12. ? changed sa102 from plane d to plane c on page 14. ? changed the i sb1 spec to 35 a. revision c ? january 2005 ? converted datasheet to new template. ? changed the v pp value to 9.5 0.5v in the text, table on page 12 , and cfi table. v pp text also changed to show that a high voltage on v pp improves only the programming time. ? added green package (pb/halide-free) option in the ordering information section.
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